publications

Our publication page showcases scientific research that leverages our nextnano software, offering a repository for researchers and users to explore publications utilizing nextnano simulations.

If you have integrated nextnano software into your thesis or dissertation, we invite you to contribute to our publication page. Share your thesis with us and become part of our nextnano community!

List of customers (selection)

The following institutions used the nextnano software in their publications.

North America

USA

Massachusetts Institute of Technology (MIT), Cambridge, MA, USA
e.g. Publication in Physical Review B (2012)
Sandia National Laboratories, Albuquerque, NM, USA
e.g. Publication in Applied Physics Letters (2012)
U.S. Naval Research Laboratory, Washington, DC, USA
e.g. Publication in Journal of Crystal Growth (2014)
NASA's Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
e.g. Publication in Proc. SPIE 9154, High Energy, Optical, and Infrared Detectors for Astronomy VI (2014)
Purdue University, West Lafayette, IN, USA
e.g. Publication in Solid State Communications (2014)
University at Buffalo - The State University of New York, Buffalo, NY, USA
e.g. Publication in Nano Letters (2011)
[NEGF] University of Wisconsin-Madison - Madison, WI, USA
e.g. Publication in Nanophotonics (2024)

Canada

[NEGF] University of Waterloo - Waterloo, ON, Canada
e.g. Publication in Photonics (2022)

Europe

Switzerland

IBM Research, Zurich, Switzerland
e.g. Publication in Journal of Physics D: Applied Physics (2014)
ETH Zurich, Zurich, Switzerland
e.g. Publication in New Journal of Physics (2010)
EPFL, Lausanne, Switzerland
e.g. Publication in Journal of Materials Chemistry (2009)
Paul Scherrer Institute, Villigen, Switzerland
e.g. Publication in Nature Photonics (2013)

France

Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Grenoble, France
e.g. Publication in Nano Letters (2012)
Institut Néel (CNRS/Université Joseph Fourier), Grenoble, France
e.g. Publication in Journal of Applied Physics (2014)
Université de Rouen, Rouen, France
e.g. Publication in Nanotechnology (2013)

The Netherlands

Delft University of Technology, Delft, The Netherlands
e.g. Publication in Journal of Nanophotonics (2010)

Germany

Walter Schottky Institut (WSI), Technische Universität München (TUM), Garching, Germany
e.g. Publication in Nature Communications (2012)
Julius-Maximilians-Universität Würzburg, Würzburg, Germany
e.g. Publication in Applied Physics Letters (2017)
Universität Bremen, Bremen, Germany
e.g. Publication in Physical Review Letters (2019)
Universität Leipzig, Leipzig, Germany
e.g. Publication in Physical Review B (2006)
Universität Paderborn, Paderborn, Germany
e.g. Publication in Physical Review B (2015)

Poland

Polish Academy of Sciences, Warsaw, Poland
e.g. Publication in Journal of Applied Physics (2009)

United Kingdom

University of Oxford, Oxford, UK
e.g. Publication in Physical Review B (2008)
University of Glasgow, Glasgow, UK
e.g. Publication in Optics Express (2014)
University of Surrey, Guildford, UK
e.g. Publication in Journal of Physics D: Applied Physics (2014)
University of Warwick, Coventry, UK
e.g. Publication in Physica Status Solidi (2013)

[NEGF] Tokyo University of Technology and Toshiba Corporation, Yokohama, Japan
e.g. Publication in Journal of Computer Chemistry (2022)

China

East China Normal University, Shanghai, China
e.g. Publication in Applied Physics Letters (2010)
National Chung Hsing University, Taichung, Taiwan
e.g. Publication in Journal of Vacuum Science & Technology B (2011)

Israel

Soreq Nuclear Research Center, Yavne, Israel
e.g. Publication in Europhysics Letters (2009)
Technion Israel Institute of Technology, Haifa, Israel
e.g. Publication in Journal of Applied Physics (2008)
[NEGF] Bar-Ilan University, Ramat Gan, Israel
e.g. Publication in Photonics (2021)

Saudi Arabia

KAUST, Thuwal, Saudi Arabia
e.g. Publication in IEEE Photonics Journal (2014)

Australia

The University of Western Australia, Crawley, Australia
e.g. Publication in IEEE Transactions on Electron Devices (2013)

Australian National University, Canberra, Australia
e.g. Publication in Nanoscale (2017)

Articles that are based on nextnano simulations

2009-2019

There are too many to be listed here.

2008

InSitu Reduction of Charge Noise in GaAs/Al_xGa_1-xAs Schottky-Gated Devices
C. Buizert, F.H.L. Koppens, M. Pioro-Ladrière, H.-P. Tranitz, I.T. Vink, S. Tarucha, W. Wegscheider, L.M.K. Vandersypen
Physical Review Letters 101, 226603 (2008)
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes
F. Rossi, G. Salviati, M. Pavesi, M. Manfredi, M. Meneghini, E. Zanoni, U. Zehnder
Journal of Applied Physics 103, 093504 (2008)
Coexistence of direct and indirect band structures in arrays of InAs/AlAs quantum dots
T.S. Shamirzaev, A.V. Nenashev, K.S. Zhuravlev
Applied Physics Letters 92, 213101 (2008)
Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector
L.G. Jiang, L.H. Kai, L. Cheng, C.S. Yan, Y.J. Zhong
Semiconductor Science and Technology 23, 035011 (2008)
Effect of uniaxial stress on the polarization of light emitted from GaN/AlN quantum dots grown on Si(111)
O. Moshe, D.H. Rich, B. Damilano, J. Massies
Physical Review B 77, 155322 (2008)
Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy
Z.Y. Zhao, W.M. Zhang, C. Yi, A.D. Stiff-Roberts, B.J. Rodriguez, A.P. Baddorf
Applied Physics Letters 92, 092101 (2008)

2007

Dimensionally constrained D’yakonov–Perel’ spin relaxation in n-InGaAs channels: transition from 2D to 1D
A.W. Holleitner, V. Sih, R.C. Myers, A.C. Gossard, D.D. Awschalom
New Journal of Physics 9, 342 (2007)
Micropatterned electrostatic traps for indirect excitons in coupled GaAs quantum wells
A. Gärtner, L. Prechtel, D. Schuh, A.W. Holleitner, J.P. Kotthaus
Physical Review B 76, 085304 (2007)
Mobility enhancement in strained p-InGaSb quantum wells
B.R. Bennett, M.G. Ancona, J. Brad Boos, B.V. Shanabrook
Appl. Phys. Lett. 91, 042104 (2007)
Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)
G. Sarusi, O. Moshe, S. Khatsevich, D.H. Rich, B. Damilano
Phys. Rev. B 75, 075306 (2007)
Charge distribution and vertical electron transport through GaN/AlN/GaN single-barrier structures
S. Leconte, F. Guillot, E. Sarigiannidou, E. Monroy
Semiconductor Science and Technology 22, 107 (2007)
Investigating valley degeneracy in AlAs two dimensional systems and split-gate structures
C. Knaak
Diploma thesis, TU Munich (2007)
Hole Mobility and Thermal Velocity Enhancement for Uniaxial Stress in Si up to 4 GPa
X.-F. Fan, L.F. Register, B. Winstead, M.C. Foisy, W. Chen, X. Zheng, B. Ghosh, S.K. Banerjee
IEEE Transactions on Electron Devices 54 (2), 291 (2007)

2006

Single-electron switching in Al_xGa_1–xAs/GaAs Hall devices
J. Müller, Y. Li, S. von Molnár, Y. Ohno, H. Ohno
Physical Review B 74, 125310 (2006)
Spin injection with three terminal device based on (Ga,Mn)As/n⁺-GaAs tunnel junction
T. Kita, M. Kohda, Y. Ohno, F. Matsukura, H. Ohno
physica status solidi (c) 3 (12), 4164 (2006)
Hole mobility and thermal velocity enhancement for uniaxial stress in Si up to 2 GPa
X.-F. Fan, L.F. Register, B. Winstead, M.C. Foisy, W. Chen, X. Zheng, B. Ghosh, S.K. Banerjee
Freescale Semiconductor, Technology Publications, EINTELL5458 (2006)
Vertical electron transport study in GaN/AlN/GaN heterostructures
S. Leconte, E. Monroy, J.-M. Gérard
Superlattices and Microstructures 40, 507 (2006)
Ultrathin InAs and modulated InGaAs layers in GaAs grown by MOVPE studied by photomodulated reflectance spectroscopy
P. Hazdra, J. Voves, E. Hulicius, J. Pangrác, Z. Šourek
Applied Surface Science 253 (1), 85 (2006)
Mid-infrared hole-intersubband electroluminescence in carbon-doped GaAs/AlGaAs quantum cascade structures
O. Malis, L.N. Pfeiffer, K.W. West, A.M. Sergent, C. Gmachl
Applied Physics Letters 88, 081117 (2006)
Coulomb corrections to the slowdown factor in quantum-dot quantum coherence
S. Michael, W.W. Chow, H.C. Schneider
Applied Physics Letters 89, 181114 (2006)
Thermally assisted tunneling processes in In_xGa_1–xAs/GaAs quantum-dot structures
M. Gonschorek, H. Schmidt, J. Bauer, G. Benndorf, G. Wagner, G.E. Cirlin, M. Grundmann
Physical Review B 74, 115312 (2006)
Single-electron switching in Al_xGa_1–xAs/GaAs Hall devices
J. Müller, Y. Li, S. von Molnár, Y. Ohno, H. Ohno
Physical Review B 74, 125310 (2006)
Two sub-band conductivity of Si quantum well
M. Prunnila, J. Ahopelto
Physica E 32, 281 (2006)
Analysis of the optical gain characteristics of semiconductor quantum-dash materials including the band structure modifications due to the wetting layer
M. Gioannini
IEEE Journal of Quantum Electronics 42 (3), 331 (2006)
Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser
L. Guijiang, L. Hongkai, L. Cheng, C. Songyan, Y. Jinzhong
Chinese Journal of Semiconductors 27 (5), 916 (2006)
A. Wójcik-Jedlinska, K. Gradkowski, K. Kosiel, M. Bugajski
The role of photoluminescence excitation spectroscopy in investigation of quantum cascade lasers properties
Electron Technology – Internet Journal 37/38 (10), 1 (2005/2006)

2005

Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT
M.A. Mastro, C.R. Eddy, Jr., N.D. Bassim, M.E. Twigg, A. Edwards, R.L. Henry, R.H. Holm
Solid-State Electronics 49 (2), 251 (2005)
Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction
J. Novák, V. Holý, J. Stangl, T. Fromherz, Z. Zhong, G. Chen, G. Bauer, B. Struth
Journal of Applied Physics 98, 073517 (2005)
Electric-field stabilization in a high-density surface superlattice
T. Feil, H.-P. Tranitz, M. Reinwald, W. Wegscheider
Applied Physics Letters 87, 212112 (2005)
Effect of well-width on the electro-optical properties of a quantum well
A. Joshua, V. Venkataraman
Semiconductor Science Technology 20, 490 (2005)
Simulation of the Quantum-Confined Stark Effect in a Single InGaN Quantum Dot
K.H. Lee, J.W. Robinson, J.H. Rice, J.H. Na, R.A. Taylor, R.A. Oliver, M.J. Kappers, C.J. Humphreys
Proceedings of the 5^th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'05), Berlin, Germany, 5 (2005)
Hochortsaufgelöste optische Spektroskopie an niedrigdimensionalen Halbleiterstrukturen
R. Schuster
PhD thesis, University of Regensburg (2005)

2004

Materials growth for InAs high electron mobility transistors and circuits
B.R. Bennett, B.P. Tinkham, J.B. Boos, M.D. Lange, R. Tsai
J. Vac. Sci. Technol. B 22 (2), 688 (2004)
Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes
M. Hermann, E. Monroy, A. Helman, B. Baur, M. Albrecht, B. Daudin, O. Ambacher, M. Stutzmann, M. Eickhoff
physica status solidi (c) 1 (8), 2210 (2004)
Effect of hydrogen on modulation-doped AlGaAs/InGaAs/GaAs heterostructures: a photoluminescence study
K. Gopalakrishna Naik, K.S.R.K. Rao, T. Srinivasan, R. Muralidharan, S.K. Mehta
Solid State Communications 132, 805 (2004)

2003

Engineering of Bulk and Nanostructured GaAs with Organic Monomolecular Films
Klaus Adlkofer
PhD Thesis, Technische Universität München (2003)

2002

Surface photovoltage studies of In_xGa_1-xAs and In_xGa_1-xAs_1-yN_y quantum well structures
Gh. Dumitras, H. Riechert, H. Porteanu, F. Koch
Physical Review B 66, 205324 (2002)

List of team publication (selection)

2010-2023

Thomas Grange (Google scholar)
Thomas Grange (Research gate)
Stefan Birner (Google scholar)
Stefan Birner (Research gate)

2009

Ballistic quantum transport using the contact block reduction (CBR) method - An introduction
S. Birner, C. Schindler, P. Greck, M. Sabathil, P. Vogl
Journal of Computational Electronics 8, 267-286 (2009)
DOI 10.1007/s10825-009-0293-z
Theory of nonequilibrium quantum transport and energy dissipation in terahertz quantum cascade lasers
T. Kubis, C. Yeh, P. Vogl, A. Benz, G. Fasching, C. Deutsch
Physical Review B 79, 195323 (2009)

2008

Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass
S. Dasgupta, S. Birner, C. Knaak, M. Bichler, A. Fontcuberta i Morral, G. Abstreiter, M. Grayson
Applied Physics Letters 93, 132102 (2008)
Theoretical model for the detection of charged proteins with a silicon-on-insulator sensor
S. Birner, C. Uhl, M. Bayer, P. Vogl
J. Phys.: Conf. Ser. 107, 012002 (2008)
Simulation of quantum cascade lasers - optimizing laser performance
S. Birner, T. Kubis, P. Vogl
Photonik international 2, 60 (2008)
Simulation zur Optimierung von Quantenkaskadenlasern
S. Birner, T. Kubis, P. Vogl
Photonik 1, 44 (2008)
Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration
M. Brehm, T. Suzuki, Z. Zhong, T. Fromherz, J. Stangl, G. Hesser, S. Birner, F. Schäffler, G. Bauer
Microelectronics Journal 39, 485 (2008)

2007

Three-Dimensional Si/Ge Quantum Dot Crystals
D. Grützmacher, T. Fromherz, C. Dais, J. Stangl, E. Müller, Y. Ekinci, H.H. Solak, H. Sigg, R.T. Lechner, E. Wintersberger, S. Birner, V. Holý, G. Bauer
Nano Letters 7 (10), 3150 (2007)
Theory of semiconductor quantum-wire based single- and two-qubit gates
T. Zibold, P. Vogl, A. Bertoni
Physical Review B 76, 195301 (2007) &
Virtual Journal of Nanoscale Science & Technology 16 (20) (2007) &
Virtual Journal of Quantum Information 7 (11) (2007)
nextnano: General Purpose 3-D Simulations
S. Birner, T. Zibold, T. Andlauer, T. Kubis, M. Sabathil, A. Trellakis, P. Vogl
IEEE Transactions on Electron Devices 54 (9), 2137 (2007)
Self-consistent quantum transport theory: Applications and assessment of approximate models
T. Kubis, P. Vogl
Journal of Computational Electronics 6, 183 (2007)
Electronic structure and transport for nanoscale device simulation
A. Trellakis and P. Vogl
in "Materials for Tomorrow. Theory, Experiments and Modelling" (Springer Series in Materials Science), ed. by S. Gemming, M. Schreiber, J.B. Suck, Springer, pp. 123-146 (2007)

2006

The 3D nanometer device project nextnano: Concepts, methods, results
A. Trellakis, T. Zibold, T. Andlauer, S. Birner, R.K. Smith, R. Morschl, P. Vogl
Journal of Computational Electronics 5 (4), 285 (2006)
Two-photon excitation spectroscopy of coupled asymmetric GaN/AlGaN quantum discs
K.H. Lee, S. Birner, J.H. Na, R.A. Taylor, S.N. Yi, Y.S. Park, C.M. Park, T.W. Kang
Nanotechnology 17, 5754 (2006)
Modeling of semiconductor nanostructures with nextnano³
S. Birner, S. Hackenbuchner, M. Sabathil, G. Zandler, J.A. Majewski, T. Andlauer, T. Zibold, R. Morschl, A. Trellakis, P. Vogl
Acta Physica Polonica A 110 (2), 111 (2006)
Enhancement of free-carrier screening due to tunneling in coupled asymmetric GaN/AlGaN quantum discs
K.H. Lee, J.H. Na, R.A. Taylor, S.N Yi, S. Birner, Y.S. Park, C.M. Park, T.W. Kang
Applied Physics Letters 89, 023103 (2006)
Direct observation of acoustic phonon mediated relaxation between coupled exciton states in a single quantum dot molecule
T. Nakaoka, E.C. Clark, H.J. Krenner, M. Sabathil, M. Bichler, Y. Arakawa, G. Abstreiter, J.J. Finley
Physical Review B 74, 121305(R) (2006)

2005

Direct Observation of Controlled Coupling in an Individual Quantum Dot Molecule
H.J. Krenner, M. Sabathil, E.C. Clark, A. Kress, D. Schuh, M. Bichler, G. Abstreiter, J.J. Finley
Physical Review Letters 94, 057402 (2005)
Recent advances in exciton based-quantum information processing in quantum dot nanostructures
H.J. Krenner, S. Stufler, M. Sabathil, E.C. Clark, P. Ester, M. Bichler, G. Abstreiter, J.J. Finley, A. Zrenner
New Journal of Physics 7, 184 (2005)
Aluminum arsenide cleaved-edge overgrown quantum wires
J. Moser, T. Zibold, D. Schuh, M. Bichler, F. Ertl, G. Abstreiter, M. Grayson, S. Roddaro, V. Pellegrini
Applied Physics Letters 87, 052101 (2005)
Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: Determination of the band offsets for In_xGa_1-xAs and In_xGa_1-xAs_1-yN_y quantum wells
M. Galluppi, L. Geelhaar, H. Riechert, M. Hetterich, A. Grau, S. Birner, W. Stolz
Physical Review B 72, 155324 (2005)
Modeling of Purely Strain-Induced CEO GaAs/In_0.16Al_0.84As Quantum Wires
S. Birner, R. Schuster, M. Povolotskyi, P. Vogl
Proceedings of the 5^th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'05), Berlin, Germany, 1 (2005)
Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs_1-xN_x capping layer
O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S.K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, H. Riechert
Virtual Journal of Nanoscale Science Technology 12 (1) (2005) &
Physical Review B 71, 245316 (2005)
Modeling the nonlinear photoluminescence intensity dependence observed in asymmetric GaN quantum discs with AlGaN barriers
K.H. Lee, S. Birner, J.H. Na, R.A. Taylor, J.W. Robinson, J.H. Rice, Y.S. Park, C.M. Park, T.W. Kang
Proceedings of 2005 5^th IEEE Conference on Nanotechnology, Nagoya, Japan, 547 (2005)
Contact block reduction method for ballistic transport and carrier densities of open nanostructures
D. Mamaluy, D. Vasileska, M. Sabathil, T. Zibold, P. Vogl
Physical Review B 71, 245321 (2005)
Calculation of carrier transport through quantum dot molecules
T. Zibold, M. Sabathil, D. Mamluy, P. Vogl
AIP Conf. Proc. 722, 799 (2005)
Proceedings of the 27^th International Conference on the Physics of Semiconductors, Flagstaff (2004)
Purely strain induced GaAs/InAlAs single quantum wires exhibiting strong charge carrier confinement
R. Schuster, H. Hajak, M. Reinwald, W. Wegscheider, D. Schuh, M. Bichler, S. Birner, P. Vogl, G. Abstreiter
AIP Conf. Proc. 772, 898 (2005)
Proceedings of the 27^th International Conference on the Physics of Semiconductors, Flagstaff (2004)
Carrier-confinement effects in nanocolumnar GaN/Al_xGa_1-xN quantum disks grown by molecular-beam epitaxy
J. Ristic, C. Rivera, E. Calleja, S. Fernández-Garrido, M. Povoloskyi, A. Di Carlo
Physical Review B 72, 085330 (2005)
Strain effects in freestanding three-dimensional nitride nanostructures
M. Povolotskyi, M. Auf der Maur, A. Di Carlo
physica status solidi (c) 2 (11), 3891 (2005)
Theoretical study of electrolyte gate AlGaN/GaN field effect transistors
M. Bayer, C. Uhl, P. Vogl
Journal of Applied Physics 97 (3), 033703 (2005)

2004

Quantum-confined Stark shifts of charged exciton complexes in quantum dots
J.J. Finley, M. Sabathil, P. Vogl, G. Abstreiter, R. Oulton, A.I. Tartakovskii, D.J. Mowbray, M.S. Skolnick, S.L. Liew, A.G. Cullis, M. Hopkinson
Physical Review B 70, 201308(R) (2004)
Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots
J.J. Finley, M. Sabathil, R. Oulton, A.I. Tartakovskii, D.J. Mowbray, M.S. Skolnick, S. Liew, M. Migliorato, M. Hopkinson, P. Vogl
Physica E 21, 199 (2004)
Advances in the theory of electronic structure of semiconductors
J.A. Majewski, S. Birner, A. Trellakis, M. Sabathil, P. Vogl
physica status solidi (c) 1 (8), 2003 (2004)
Optical properties of low-dimensional semiconductor systems fabricated by cleaved edge overgrowth
R. Schuster, H. Hajak, M. Reinwald, W. Wegscheider, G. Schedelbeck, S. Sedlmaier, M. Stopa, S. Birner, P. Vogl, J. Bauer, D. Schuh, M. Bichler, G. Abstreiter
physica status solidi (c) 1 (8), 2028 (2004)
Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces
M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, S. Birner, P. Vogl, D. Alderighi, M. Gurioli, A. Vinattieri, M. Colocci, S. Sanguinetti, R. Nötzel
Semiconductor Science and Technology 19, S351 (2004)
Electronic and optical properties of [N11] grown nanostructures
M. Povolotskyi, A. Di Carlo, S. Birner
physica status solidi (c) 1 (6), 1511 (2004)
Tuning the Piezoelectric Fields in Quantum Dots: Microscopic Description of Dots Grown on (N11) Surfaces
M. Povolotskyi, A. Di Carlo, P. Lugli, S. Birner, P. Vogl
IEEE Transactions on Nanotechnology 3 (1), 124 (2004)
Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires
D. Alderighi, M. Zamfirescu, A. Vinattieri, M. Gurioli, S. Sanguinetti, M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, R. Nötzel
Applied Physics Letters 84 (5), 786 (2004)
Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots
D. Bougeard, P.H. Tan, M. Sabathil, P. Vogl, G. Abstreiter, K. Brunner
Physica E 21, 312-316 (2004)
Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots
J.J. Finley, M. Sabathil, R. Oulton, A.I. Tartakovskii, D.J. Mowbray, M.S. Skolnick, S. Liew, M. Migliorato, M. Hopkinson, P. Vogl
Physica E 21, 199-203 (2004)

2003

Microscopic description of nanostructures grown on (N11) surfaces
M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, S. Birner, P. Vogl
Journal of Computational Electronics 2, 275 (2003)
Efficient computational method for ballistic currents and application to single quantum dots
M. Sabathil, S. Birner, D. Mamaluy, P.Vogl
Journal of Computational Electronics 2, 269 (2003)
Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate
D. Alderighi, M. Zamfirescu, M. Gurioli, A. Vinattieri, M. Colocci, S. Sanguinetti, M. Povolotskyi, A. Di Carlo, P. Lugli, R. Nötzel
physica status solidi (c) 0 (5), 1433 (2003)
Theory of vertical and lateral Stark shifts of excitons in InGaAs quantum dots
M. Sabathil, S. Hackenbuchner, S. Birner, J.A. Majewski, P. Vogl, J.J. Finley
physica status solidi (c) 0 (4), 1181 (2003)
Nonradiative relaxation times in diagonal transition Si/SiGe quantum cascade structures
I. Bormann, K. Brunner, S. Hackenbuchner, G. Abstreiter, S. Schmult, W. Wegscheider
Applied Physics Letters 83 (26), 5371 (2003)

2002

Midinfrared intersubband electroluminescence of Si/SiGe quantum cascade structures
I. Bormann, K. Brunner, S. Hackenbuchner, G. Zandler, G. Abstreiter, S. Schmult, W. Wegscheider
Applied Physics Letters 80 (13), 2260 (2002)
Elektronische Struktur von Halbleiter-Nanobauelementen im thermodynamischen Nichtgleichgewicht (PhD Thesis)
S. Hackenbuchner
Selected Topics of Semiconductor Physics and Technology 48
edited by G. Abstreiter, M.-C. Amann, M. Stutzmann, P. Vogl, Walter Schottky Institute, TU Munich (2002)
Towards fully quantum mechanical 3D device simulation
M. Sabathil, S. Hackenbuchner, J.A. Majewski, G. Zandler, P. Vogl
Journal of Computational Electronics 1, 81 (2002)
Nonequilibrium band structure of nano-devices
S. Hackenbuchner, M. Sabathil, J.A. Majewski, G. Zandler, P. Vogl, E. Beham, A. Zrenner, P. Lugli
Physica B 314, 145-149 (2002)

2001

Polarization induced 2D hole gas in GaN/AlGaN heterostructures
S. Hackenbuchner, J.A. Majewski, G. Zandler, P. Vogl
Journal of Crystal Growth 230, 607 (2001)

nextnano++ software

Walter Schottky Institute, Technische Universität München, Germany

Optoelectronic and spin-related properties of semiconductor nanostructures in magnetic fields
T. Andlauer
Selected Topics of Semiconductor Physics and Technology (G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, eds.), Vol. 105, Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V., München, 171 pp. (2009)
Semiconductor based quantum information devices: Theory and simulations
T. Zibold
Selected Topics of Semiconductor Physics and Technology (G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, eds.), Vol. 87, Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V., München (2007)

nextnano³ software